PART |
Description |
Maker |
BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
GP1600FSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 1.6KA I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展| 1.6KA一(c
|
Dynex Semiconductor, Ltd.
|
FS8R12KF |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五(巴西)国际消费电子展| 8A条一(c
|
ECM Electronics, Ltd.
|
PM600HHA060 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 600A I(C) 晶体管| IGBT功率模块|独立| 600V的五(巴西)国际消费电子展| 601余(丙)
|
Mitsubishi Electric, Corp.
|
CM100TF12E |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 100号A一(c
|
KOA Speer Electronics,Inc.
|
IEF21KA1 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 15A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五(巴西)国际消费电子展|5A一(c
|
TE Connectivity, Ltd.
|